features high density cell design for low r ds(on) voltage controlled small signal switch rugged and reliable high saturation current capability electrical characteristics ta = 25 t i n u x a m p y t n i m s n io t i d n o c t s e t l o b m y s r e t e m a r a p drain-source breakdown voltage v dss v gs =0 v, i d =10 0 a 60 v i t n e r r u c n i a r d e g a t l o v e t a g o r e z dss v ds =60 v, v gs a n 0 8 v 0 = l e g a k a e l y d o b - e t a g gss v ds =0 v, v gs = 25 v 80 na v e g a t l o v d l o h s e r h t - e t a g gs(th) v ds =v gs ,i d =250 a 1 2.5 v v gs =10 v, i d =500 ma 7.5 v gs =5 v, i d =50 ma 7.5 i t n e r r u c n i a r d e t a t s - n o d(on) v gs =10 v, v ds =7 v 500 ma g e c n a t c u d n o c n a r t d r a w r o f ts v ds =10 v, i d =200 ma 80 ms c e c n a t i c a p a c t u p n i iss 50 c e c n a t i c a p a c t u p t u o oss 25 c e c n a t i c a p a c r e f s n a r t e s r e v e r rss 5 t e m i t n o - n r u t d(0n) 20 t e m i t f f o - n r u t d(off) 40 3.75 0.375 v gs =10v, i d =500ma d =50ma v gs =5v, i v e g a t l o v d r a w r o f e d o i d sd i s =115 ma, v gs =0 v 0.55 1.2 v v e g a t l o v - n o e c r u o s - n i a r d ds(on) v dd =25 v, r l =50 i d =500 ma,v gen =10 v r g =25 ns v v pf v ds =25 v, v gs =0 v, f=1 mhz r e c n a t s i s e r - n o e c r u o s - n i a r d ds(0n) absolute maximum ratings ta=25 t i n u g n i t a r l o b m y s r e t e m a r a p v e g a t l o v e c r u o s - n i a r d ds 60 v i t n e r r u c n i a r d d 115 ma p n o i t a p i s s i d r e w o p d 225 mw t e r u t a r e p m e t n o i t c n u j j 150 t e r u t a r e p m e t e g a r o t s stg -55 to 150 2n7002 n-channel enhancement mosfet 1 2 3 1.gate 2.source 3.drain simplified outline(sot-23) s d g www.yfwdiode.com
typical characterisitics 1 6 0 1 28 0 2 4 6 0246810 0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 0 . 00 . 40 . 81 . 21 . 6 0 . 01 0 . 1 1 012345 0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 0 . 00 . 20 . 40 . 60 . 81 . 0 0 2 4 6 8 i d =50ma i d =500ma i d r ds(on) t a =25 pulsed v gs r ds(on) on-resistance r ds(on) ( : ) gate to source voltage v gs (v) t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =25 pulsed 0 . 3 0 . 03 v sd i s source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v gs =10v,9v,8v,7v,6v,5v v gs =2v v gs =4v v gs =3v output characteristics drain current i d (a) drain to source voltage v ds (v) v gs =5v v gs =10v t a =25 pulsed on-resistance r ds(on) ( : ) drain current i d (a) n 2n7002 www.yfwdiode.com
unit a 1 max. b p cd e e 1 h e l p qw v mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 sot-23 2n7002 www.yfwdiode.com
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